FDP18N20F
Manufacturer:
On Semiconductor
Mfr.Part #:
FDP18N20F
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 100 W 200 V Continuous Drain Current (ID):18 A 26 nC
| Parameter | Value |
|---|---|
| Length | 10.67 mm |
| Width | 4.7 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 145 MΩ |
| Height | 16.3 mm |
| Packaging | Tube |
| RoHS | Compliant |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 100 W |
| Power Dissipation | 100 W |
| Number of Channels | 1 |
| Input capacitance | 1.18 nF |
| Continuous Drain Current (ID) | 18 A |
| Rds On Max | 145 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 16 ns |
| Turn-Off Delay Time | 50 ns |
| Element Configuration | Single |
| Fall Time | 40 ns |
| Rise Time | 50 ns |
| Gate Charge | 26 nC |
| Drain to Source Resistance | 140 mΩ |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 3 V |
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